Journal article
Electrostatically Induced Black Phosphorus Infrared Photodiodes
W Yan, S Wang, K Xing, S Balendhran, M Tebyetekerwa, K Watanabe, T Taniguchi, MS Fuhrer, KB Crozier, J Bullock
Advanced Functional Materials | WILEY-V C H VERLAG GMBH | Published : 2024
Abstract
Homojunctions are key elements in many mainstream electronic devices. However, conventional dopant-based “pn” homojunctions are not easily achievable in new material families, such as the 2D materials. Several recent 2D material studies have shown that lateral pn homojunctions can instead be electrostatically induced using back gates localized to either the source or drain contacts. Here, a hBN-encapsulated black phosphorus dual-gate device containing a lateral pn homojunction, whose orientation can be switched via application of back gate voltages, is demonstrated. Importantly, this study extends the state-of-the-art for this architecture by characterizing the photoresponse under infrared (..
View full abstractRelated Projects (1)
Grants
Awarded by Australian Research Council
Funding Acknowledgements
This work was supported by the Australian Research Council (DE210101129 and DP210103428). K.X. and M.S.F. acknowledges support from the Australian Research Council (DP200101345). M.T. acknowledges support from the Centre for Microscopy and Microanalysis, UQ, for providing infrastructure for materials characterization and Joseph Fernando and Joseph Otte for assistance with S/TEM imaging and EDX analysis. K.B.C. acknowledges the support from the Australian Research Council (ARC) the Centre of Excellence for Transformative Meta-Optical Systems (CE200100010). J.B. acknowledges support from the Melbourne Centre for Nanofabrication (MCN) through their Technology Fellowship program. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF).